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Strip silicon radiation detectors
Silicon detectors consist of n type material while having p type aluminium strips on the surface which are separated by a thin insulator. At the same time there is an electric field between the p strips and the n type material. When a radiation particle passes the detector, silicon atoms are ionized and free electrons leave these atoms with an electron vacancy (holes). After they reach the p type strip they are collected and then create a charge on the aluminium strip which is possible to be measured with special electronics.
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As an example, we have considered datasheets of 2 sensors. Those are DT Standard Photodiode Products [7] and First Sensor PIN PD [8].
Radiation detectors are usually very high sensitive, though the exact value is not defined. It can be improved by depressing noise signals which appear from e.g. light. Manufacturing material's quality is very important in sensitivity rise.
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The main aim of this is to filter the noise from the signal and to provide a quickly restored baseline. The CR-200 shaping amplifiers have low output impedance (<5 Ohms) and can source/sink 10 mA of output current. CR-110 output impedance is 50 Ohms.[9.]
The whole circuit is presented as commercially available PCBs: CR-150 evaluation board and CR-160 Gaussian shaping amplifier evaluation board (Figure 9, Figure 10).
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