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Strip silicon detectors consist of n type material while having p type aluminium strips on the surface which are separated by a thin insulator.

The crystalline structure is diamond cubic (FCC). Polysilicon consists of small Si crystals randomly oriented.

 

  • Are metals used? Which ones? Why?
    aluminium strips 

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  • How is the sensor manufactured?

http://indico.cern.ch/event/124392/contribution/0/material/slides/0.pdf

1.  Starting Point: single-crystal n-doped wafer. 
2.  Surface passivation by SiO2-layer. E.g. growing by (dry) thermal oxidation at 1030 °C.
3.  Window opening using photolithography technique with etching, e.g. for strips!
4. Doping using either 

•  Thermal diffusion (furnace)
•  Ion implantation

5.  After ion implantation: Curing of damage via thermal annealing at approx. 600°C, (activation of dopant atoms by incorporation into silicon lattice)
6.  Metallization of front side: sputtering or CVD
7.  Removing of excess metal by photolitography: etching of non-covered areas
8.  Full-area metallization of backplane with annealing at approx. 450°C for better adherence between metal and silicon

9. Wafer dicing (cutting)

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  • What are the typical manufacturing process steps?
    Silicon micromachining
    Photolithography

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