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- How is the sensor manufactured?
http://indico.cern.ch/event/124392/contribution/0/material/slides/0.pdf
1. Starting Point: single-crystal n-doped wafer.
2. Surface passivation by SiO2-layer. E.g. growing by (dry) thermal oxidation at 1030 °C.
3. Window opening using photolithography technique with etching, e.g. for strips!
4. Doping using either
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Rehak, P. ; Brookhaven Nat. Lab., Upton, NY, USA. Silicon radiation detectors [online]. Nuclear Science Symposium Conference Record, 2003 IEEE (Volume:5 ); 19-25 Oct. 2003, 2492-2497.
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URL: http://ieeexplore.ieee.org.ezproxy.metropolia.fi/stamp/stamp.jsp?tp=&arnumber=4437282, Accessed 16 March 2014.
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URL: http://ieeexplore.ieee.org.ezproxy.metropolia.fi/stamp/stamp.jsp?tp=&arnumber=256575, Accessed 16 March 2014.
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URL: http://ieeexplore.ieee.org.ezproxy.metropolia.fi/stamp/stamp.jsp?tp=&arnumber=1312040&tag=1, Accessed 17 March 2014.
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URL: http://www.ajat.fi/, Accessed 17 March 2014.
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URL: http://www.deetee.com/en_US/home.html, Accessed 5 April 2014.
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URL: http://www.marubun.co.jp/product/measurement/sensor/8ids6e000000k1lh-att/X100-7SMD.pdf, Accessed 5 April 2014.
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URL: http://www.cremat.com/ , Accessed 10 April 2014.
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URL: http://indico.cern.ch/event/137337/material/slides/0?contribId=10&sessionId=5 - Integrated Digital conference Official website. Silicon strips and pixels technologies event, CERN, Switzerland; 31.01.2011-10.02.2011.
URL: http://indico.cern.ch/event/124392/contribution/0/material/slides/0.pdf