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In 1957, Texas Instruments developed the mesa transistor. Then came some very important events in the late 1950's. Jack Kilby of Texas Instruments developed the first IC using these mesa techniques. Kilby used discrete wire interconnection. See Fig. 4 for a picture of that device. You can see it really was a simple device by our standards today. It has one transistor, a capacitor, and resistor all together on a piece of silicon. This is the first integrated circuit, not really large scale integration. The next thing that happened was at Fairchild, where Jean Hoerni developed the planar process for transistors. In particular, the planar process offered the capability for doing thin-film metal interconnection. Bob Noyce, using this process, made an IC using vapor deposited metal connections, which became public in 1959. [7]
Figure 4. Jack Kilby's first integrated circuit (reprinted from [110].)
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- William F. Brinkman, Douglas E. Haggan, and William W. Troutman, "A History of the Invention of the Transistor and Where It Will Lead Us" IEEE journal of solid-state circuit, vol. 32, NO. 12, DEC 1997.
- M. Riordan and L. Hoddeson Crystal Fire the Birth of the Information Age. New York: Norton, p. 102.
- "A History of Engineering and Science in the Bell System—Electronics Technology (1925–1975)," p. 2, F. M. Smits, Ed
- W. Shockley, M. Sparks, and G. K. Teal, "P-N junction transistors," Phys., Rev. 83, July 1, 1951, pp. 151–162.
- G. C. Dacey and I. M. Ross, "Unipolar field-effect transistor," Proc. IRE 41, Aug. 1953, pp. 970–979.
- D. Kahng and M. M. Atalla, "Silicon-silicon dioxide field induced surface device," presented at Solid State Device Research Conf., Pittsburgh, PA, June 1960.
- J. A. Hoerni, "Planar silicon diodes and transistors," IRE Trans. Electron Devices, Mar. 8, 1961, p. 178; also presented at Professional Group on Electron Devices Meeting, Washington, D.C., Oct. 1960.
- Types of Transistor
URL: http://www.infoplease.com/encyclopedia/science/transistor-types-transistors.html
Accessed date: 20 April 2015 - Transistor and FET Characteristics
URL: http://www.dauniv.ac.in/downloads/Electronic%20Devices/09EDCJFETLesson09.pdf
Accessed date: 20 April 2015Table of Transistor Count
Processor
Transistor count
Date of intr.
Designer
Process
Area
Intel 4004
2,300
1971
Intel
10 µm
12 mm²
Intel 8008
3,500
1972
Intel
10 µm
14 mm²
MOS Technology 6502
3,510[5]
1975
MOS Technology
8 μm
21 mm²
Motorola 6800
4,100
1974
Motorola
6 μm
16 mm²
Intel 8080
4,500
1974
Intel
6 μm
20 mm²
RCA 1802
5,000
1974
RCA
5 μm
27 mm²
Intel 8085
6,500
1976
Intel
3 μm
20 mm²
Zilog Z80
8,500
1976
Zilog
4 μm
18 mm²
Motorola 6809
9,000
1978
Motorola
5 μm
21 mm²
Intel 8086
29,000
1978
Intel
3 μm
33 mm²
Intel 8088
29,000
1979
Intel
3 μm
33 mm²
WDC 65C02
11,500[6]
1981
WDC
3 µm
6 mm²
Intel 80186
55,000
1982
Intel
3 μm
60 mm²
Motorola 68000
68,000
1979
Motorola
3.5 μm
44 mm²
Intel 80286
134,000
1982
Intel
1.5 µm
49 mm²
WDC 65C816
22,000[7]
1983
WDC
9 mm²
Motorola 68020
200,000
1984
Motorola
2 μm
Intel 80386
275,000
1985
Intel
1.5 µm
104 mm²
ARM 1
25,000[8]
1985
Acorn
Novix NC4016
16,000[9]
1985[10]
Harris Corporation
3 μm[11]
ARM 2
25,000
1986
Acorn
TI Explorer's 32-bit Lisp machine chip
553,000
1987
Texas Instruments
Intel i960
250,000
1988
Intel
0.6 µm
Intel 80486
1,180,235
1989
Intel
1 µm
173 mm²
ARM 3
300,000[8]
1989
Acorn
R4000
1,350,000
1991
MIPS
1.0 µm
213 mm²
ARM 6
30,000
1991
ARM
Pentium
3,100,000
1993
Intel
0.8 µm
294 mm²
ARM 7
578,977
1994
ARM
68.51 mm²
Pentium Pro
5,500,000
1995
Intel
0.5 µm
307 mm²
AMD K5
4,300,000
1996
AMD
0.5 µm
251 mm²
Pentium II Klamath
7,500,000
1997
Intel
0.35 µm
195 mm²
Pentium II Deschutes
7,500,000
1998
Intel
0.25 µm
113 mm²
AMD K6
8,800,000
1997
AMD
0.35 µm
162 mm²
Pentium III Katmai
9,500,000
1999
Intel
0.25 µm
128 mm²
Pentium III Coppermine
21,000,000
2000
Intel
180 nm
80 mm²
Pentium II Mobile Dixon
27,400,000
1999
Intel
180 nm
180 mm²
Pentium III Tualatin
45,000,000
2001
Intel
130 nm
81 mm²
AMD K6-III
21,300,000
1999
AMD
0.25 µm
118 mm²
AMD K7
22,000,000
1999
AMD
0.25 µm
184 mm²
Pentium 4 Willamette
42,000,000
2000
Intel
180 nm
217 mm²
Pentium 4 Northwood
55,000,000
2002
Intel
130 nm
145 mm²
Pentium 4 Prescott
112,000,000
2004
Intel
90 nm
110 mm²
Pentium 4 Prescott-2M
169,000,000
2005
Intel
90 nm
143 mm²
Pentium 4 Cedar Mill
184,000,000
2006
Intel
65 nm
90 mm²
Atom
47,000,000
2008
Intel
45 nm
24 mm²
Barton
54,300,000
2003
AMD
130 nm
101 mm²
AMD K8
105,900,000
2003
AMD
130 nm
193 mm²
Itanium 2 McKinley
220,000,000
2002
Intel
180 nm
421 mm²
Cell
241,000,000
2006
Sony/IBM/Toshiba
90 nm
221 mm²
Core 2 Duo Conroe
291,000,000
2006
Intel
65 nm
143 mm²
Core 2 Duo Allendale
169,000,000
2007
Intel
65 nm
111 mm²
Itanium 2 Madison 6M
410,000,000
2003
Intel
130 nm
374 mm²
AMD K10 quad-core 2M L3
463,000,000
2007
AMD
65 nm
283 mm²
ARM Cortex-A9
26,000,000
2007
ARM
Core 2 Duo Wolfdale3M
230,000,000
2008
Intel
45 nm
83 mm²
Itanium 2 with 9 MB cache
592,000,000
2004
Intel
130 nm
432 mm²
Core 2 Duo Wolfdale
411,000,000
2007
Intel
45 nm
107 mm²
Core i7 (Quad)
731,000,000
2008
Intel
45 nm
263 mm²
AMD K10 quad-core 6M L3
758,000,000
2008
AMD
45 nm
258 mm²
POWER6
789,000,000
2007
IBM
65 nm
341 mm²
Six-core Opteron 2400
904,000,000
2009
AMD
45 nm
346 mm²
16-core SPARC T3
1,000,000,000
2010
Sun/Oracle
40 nm
377 mm²
Apple A7 (dual-core ARM64 "mobile SoC")
1,000,000,000
2013
Apple
28 nm
102 mm²
Quad-core + GPU Core i7
1,160,000,000
2011
Intel
32 nm
216 mm²
Six-core Core i7 (Gulftown)
1,170,000,000
2010
Intel
32 nm
240 mm²
8-core POWER7 32M L3
1,200,000,000
2010
IBM
45 nm
567 mm²
8-core AMD Bulldozer
1,200,000,000
2012
AMD
32 nm
315 mm²
Quad-core + GPU AMD Trinity
1,303,000,000
2012
AMD
32 nm
246 mm²
Quad-core z196[20]
1,400,000,000
2010
IBM
45 nm
512 mm²
Quad-core + GPU Core i7 Ivy Bridge
1,400,000,000
2012
Intel
22 nm
160 mm²
Quad-core + GPU Core i7 Haswell
1,400,000,000
2014
Intel
22 nm
177 mm²
Dual-core Itanium 2
1,700,000,000
2006
Intel
90 nm
596 mm²
Six-Core Core i7 Ivy Bridge E
1,860,000,000
2013
Intel
22 nm
256 mm²
Duo-core + GPU Core i7 Broadwell-U
1,900,000,000
2015
Intel
14 nm
133 mm²
Six-core Xeon 7400
1,900,000,000
2008
Intel
45 nm
503 mm²
Quad-core Itanium Tukwila
2,000,000,000
2010
Intel
65 nm
699 mm²
Apple A8 (dual-core ARM64 "mobile SoC")
2,000,000,000
2014
Apple
20 nm
89 mm²
8-core POWER7+ 80 MB L3 cache
2,100,000,000
2012
IBM
32 nm
567 mm²
Six-core Core i7/8-core Xeon E5(Sandy Bridge-E/EP)
2,270,000,000
2011
Intel
32 nm
434 mm²
8-core Xeon Nehalem-EX
2,300,000,000
2010
Intel
45 nm
684 mm²
8-core Core i7 Haswell-E
2,600,000,000
2014
Intel
22 nm
355 mm²
10-core Xeon Westmere-EX
2,600,000,000
2011
Intel
32 nm
512 mm²
Six-core zEC12
2,750,000,000
2012
IBM
32 nm
597 mm²
Apple A8X (tri-core ARM64 "mobile SoC")
3,000,000,000
2014
Apple
20 nm
8-core Itanium Poulson
3,100,000,000
2012
Intel
32 nm
544 mm²
IBM z13
3,990,000,000
2015
IBM
22 nm
678 mm²
12-core POWER8
4,200,000,000
2013
IBM
22 nm
650 mm²
15-core Xeon Ivy Bridge-EX
4,310,000,000
2014
Intel
22 nm
541 mm²
62-core Xeon Phi
5,000,000,000
2012
Intel
22 nm
Xbox One main SoC
5,000,000,000
2013
Microsoft/AMD
28 nm
363 mm²
18-core Xeon Haswell-E5
5,560,000,000
2014
Intel
22 nm
661 mm²
SPARC M7
>10,000,000,000
2014
Oracle
20 nm
IBM z13 Storage Controller
7,100,000,000
2015
IBM
22 nm
URL:http://en.wikipedia.org/wiki/Integrated_circuit#/media/File:Kilby_solid_circuit.jpg
Accessed date:21 May 2015
