Table of Contents outline true indent 20ppx
Final presentation
Introduction
We started the study of sensor technology with Accelerometer closely packed in case from Murata. The first challenge was to open that without breaking the internal electronic part/circuit. After different type of force experiment on box, the small PCB come out. After close look, Accelerometer and relevant components. Then start searching for more sencor sensor related to Accelerometer and find XTrinsic FXLN83xxQ from Freescale.
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Xtrinsic FXLN83xxQ 3-Axis Low- Power Analog-Output Accelerometer FXLN83xxQ is a family of 3-axis, low-power, low- g , analog - output accelerometers that consist of an acceleration sensor along with a CMOS signal conditioning and control ASIC in a 3x3x1mm QFN package. The analog outputs for the X, Y, and Z axes are internally compensated for zero- g offset and sensitivity, and then buffered to the output pads. The outputs have a fixed zero- g offset of 0.75V, irrespective of the V DD VDD supply voltage. The bandwidth of the output signal for each axis may be independently adjusted using external capacitors. The host can place the FXLN83xxQ into a low-current shutdown mode to conserve power.
Characteristics
Supply voltage (V DD ) from 1.71 V to 3.6 V
Accelerometer operating ranges selectable
±2 g or ±8 g (FXLN83x1Q)
±4 g or ±16 g (FXLN83x2Q)
Low current consumption of 180 μA (typical)
Output Bandwidth Options
High bandwidth, 2.7 kHz (XY axes), 600 Hz (Z axis), (FXLN837XQ)
Low bandwidth, 1.1 kHz (XY axes), 600 Hz (Z axis), (FXLN836XQ)
3 x 3 x 1 mm, 12-pin QFN package (0.65 mm lead pitch)
Robust design with high shock survivability (10,000 g )
Operating temperature from –40 °C to +105 °C
MSL 1 compliant
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• A standard pick-and-place process and equipment shall be used. A Hand soldering process is not recomendedrecommended.
• A screw-down or stacking to mount the PCB into an enclosure must not be used. These methods could bend the PCB, which would put stress on the package.
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The nitrides of silicon, aluminium and titanium as well as silicon carbide and other ceramics are increasingly applied in MEMS fabrication due to advantageous combinations of material properties. AlN crystallizes in the wurtzite structure and thus shows pyroelectric and piezoelectric properties enabling sensors, for instance, with sensitivity to normal and shear forces. TiN, on the other hand, exhibits a high electrical conductivity and large elastic modulus allowing to realize electrostatic MEMS actuation schemes with ultrathin ultra thin membranes. Moreover, the high resistance of TiN against bio corrosion qualifies the material for applications in biogenic environments and in biosensors.
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